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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1840 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) *High Current Capability *Wide Area of Safe Operation *Complement to Type 2SB1230 APPLICATIONS *Designed for motor drivers, converters and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @ Ta=25 w w scs .i w VALUE 110 UNIT V 100 6 V V 15 25 5 3 W 100 150 -55~150 A A A .cn mi e PC Collector Power Dissipation @ TC=25 TJ Tstg Junction Temperature Storage Temperature Range isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1840 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 110 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 0.8 V VBE(sat) Base -Emitter Saturation Voltage IC= 6A; IB= 0.6A B 1.5 V A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-1 Classifications P 50-100 Q w w scs .i w VEB= 5V; IC= 0 IC= 1.5A; VCE= 2V IC= 6A; VCE= 2V .cn mi e 50 20 100 100 A 140 70-140 isc Websitewww.iscsemi.cn 2 |
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